X-On Electronics has gained recognition as a prominent supplier of PHE13005,127 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PHE13005,127 Bipolar Transistors - BJT are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PHE13005,127 WeEn Semiconductor

PHE13005,127 electronic component of WeEn Semiconductor
PHE13005,127 WeEn Semiconductor
PHE13005,127 Bipolar Transistors - BJT
PHE13005,127  Semiconductors

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See Product Specifications
Part No. PHE13005,127
Manufacturer: WeEn Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) NPN 4A 400V TO-220 (TO-220-3) RoHS
Datasheet: PHE13005,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6725 ea
Line Total: USD 0.67 
Availability - 103
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
103
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6725
10 : USD 0.5374
30 : USD 0.4797
100 : USD 0.3162
500 : USD 0.2901
1000 : USD 0.2753

1006
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.742
5 : USD 0.5712
10 : USD 0.4088
50 : USD 0.3906
61 : USD 0.2786

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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We are delighted to provide the PHE13005,127 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHE13005,127 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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's portolio WeEn Semiconductor's PHE13005,127 is a black multi-chip module from their P-Channel Enhancement Mode Field-Effect Transistor (FET) product portfolio. This module features a drain-source resistance of 0.08 ohm, a drain current of 6.7 A, and a voltage of 20V. It is designed for high current applications, comes with an on-state Rdh (on-state resistance) of 0.135 Ohm, and can be used with various N-Channel devices. The module is housed in a SOP-3 package and is lead-free and RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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