ESDALD05UE2X WeEn Semiconductor

ESDALD05UE2 ESD Protection Diodes Array Rev.01 - 19 May 2021 Product data sheet 1. General description The ESDALD05UE2 is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). 2. Features and benefits GND 3 Peak pulse power 60W 8/20s waveform Protects two I/O lines IEC 61000-4-2 (ESD) 20kV(air), 20kV(contact) IEC 61000-4-5 (Lightning) 4A (8/20s) Low capacitance 12 Low leakage current I/O1 I/O2 Low clamping voltage Meet MSL level1 Halogen free and RoHS compliant alogen-Free RoHS h 3. Applications USB 2.0 HDMI 1.3 and HDMI 1.4 SATA and eSATA DVI IEEE 1394 PCI Express Notebooks 4. Ordering information Type number Package Orderable part number Packing Small packing Marking Package Name method quantity issue date ESDALD05UE2 SOT23-3L ESDALD05UE2X Tape and reel 3000 R22 13-Oct-2020 5. Absolute maximum ratings In accordance with the Absolute Maximum Rating System (IEC 60134). T = 25 C unless otherwise specified. j Symbol Parameter Conditions Values Unit Absolute maximum rating P peak pulse power t = 8/20 s 60 W PPM p I peak pulse current t = 8/20 s 4 A PP p V ESD per IEC 61000-4-2 (air) 20 kV ESD ESD per IEC 61000-4-2 (contact) 20 kV T storage temperature range -55 to 150 C stg T operating temperature range -55 to 150 C jWeEn Semiconductors ESDALD05UE2 ESD Protection Diodes Array 6. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Condition Min Typ Max Unit V Reverse Working Voltage Any I/O pin to GND - - 5 V RWM V Reverse Breakdown Voltage I = 1 mA Any I/O pin to GND 6 - 9 V BR T I Reverse Leakage Current V = 5 V Any I/O pin to GND - - 100 nA R RWM V Clamping Voltage I = 1 A t = 8/20 s - - 10 V C PP p Any I/O pin to GND I = 4 A t = 8/20 s - - 15 V PP p Any I/O pin to GND C Junction Capacitance V = 0 V f = 1 MHz - 0.5 0.8 pF J R Any I/O pin to GND Fig. 1. Pulse rating curve Fig. 2. Peak pulse power derating curve Fig. 3. Pulse waveform Fig. 4. Clamping voltage vs Peak pulse current ESDALD05UE2 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2021. All rights reserved Product data sheet 19 May 2021 2 / 5