MURS360BJ WeEn Semiconductor

MURS360B Ultrafast power diode Rev.02 - 1 August 2018 Product data sheet 1. General description Ultrafast power diode in a SMB surface-mountable plastic package. 2. Features and benefits Low on-state loss Low leakage current Low thermal resistance Surface-mountable package Reduces switching losses in associated MOSFET or IGBT 3. Applications Buck and Boost converter Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Inverter freewheeling and protection diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 86 C 3 A F(AV) lead Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 86 C 6 A FRM p lead current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 100 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 110 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 3 A T = 25 C Fig. 6 - - 1.3 V F F j I = 3 A T = 150 C Fig. 6 - 0.88 1.05 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 50 - ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors MURS360B Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol K A 1 K cathode 001aaa020 12 2 A anode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MURS360B SMB Hermetically sealed plastic package SMB 2 leads SMB 7. Marking Table 4. Marking codes Type number Marking codes MURS360B 360B MURS360B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 1 August 2018 2 / 10