BYV25FD-600,118 WeEn Semiconductor

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode Rev. 03 23 September 2016 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a TO252 (DPAK) plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic Low on-state losses Surface-mountable package Low thermal resistance 1.3 Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --600V RRM reverse voltage I average forward square-wave pulse =0.5 --5 A F(AV) current T 121 C see Figure 1 mb see Figure 2 Static characteristics V forward voltage I =5A T =25C -1.3 1.9 V F F j see Figure 5 I =5A T =150 C -1.1 1.7 V F j see Figure 5 Dynamic characteristics t reverse recovery I =1A V =30V -17.535 ns rr F R time dI /dt = 100 A/s T =25C F j see Figure 6 DPAK