VS-HFA220FA120 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 220 A FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Designed and qualified for industrial level UL approved file E78996 SOT-227 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS The dual diode series configuration (VS-HFA220FA120) is V 1200 V R used for output rectification or freewheeling/clamping V (typical) 2.68 V F operation and high voltage application. t (typical) 58 ns rr The semiconductor in the SOT-227 package is isolated from I per module at T 220 A at 38 C the copper base plate, allowing for common heatsinks and F(AV) C compact assemblies to be built. Package SOT-227 These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX.UNITS Cathode to anode voltage V 1200 V R Continuous forward current I T = 68 C 110 F C A Single pulse forward current I T = 25 C 700 FSM J T = 25 C 500 C Maximum power dissipation per leg P W D T = 100 C 400 C RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage T , T -55 to +150 C J Stg temperature range ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 100 A 1200 - - BR R I = 100 A - 2.68 3.60 F I = 200 A - 3.41 4.70 V F Forward voltage V FM I = 100 A, T = 150 C - 2.62 2.89 F J I = 200 A, T = 150 C - 3.59 3.89 F J V = V rated - 10 75 A R R Reverse leakage current I T = 125 C, V = V rated - 2 - RM J R R mA T = 150 C, V = V rated - 6 15 J R R Revision: 10-Sep-2019 Document Number: 93636 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA220FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A dI /dt = - 200 A/s V = 30 V - 58 - F F R Reverse recovery time t T = 25 C - 157 - ns rr J T = 125 C - 255 - J I = 50 A F T = 25 C - 15 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 22.5 - J V = 200 V R T = 25 C - 1150 - J Reverse recovery charge Q nC rr T = 125 C - 2850 - J Junction capacitance C V = 1200 V - 53 - pF T R THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting - - 0.25 R thJC Junction to case, both legs conducting - - 0.125 C/W Case to heatsink R Flat, greased surface - 0.10 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 10 1000 T = 150 C J 1 T = 125 C J T = 150 C J 100 0.1 T = 125 C J T = 25 C J 0.01 10 0.001 T = 25 C J 0.0001 1 0 200 400 600 800 1000 1200 0.5 1 1.5 2 2.5 3 3.5 4 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Sep-2019 Document Number: 93636 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R