VS-HFA25TB60S-M3
www.vishay.com
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 25 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I and Q
RRM rr
Specified at operating conditions
Meets MSL level 1, per J-STD-020,
2
LF maximum peak of 245 C
1
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
D PAK (TO-263AB)
BENEFITS
Base
Reduced RFI and EMI
cathode
Reduced power loss in diode and switching transistor
2
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
1 3
N/C Anode
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
PRIMARY CHARACTERISTICS
which is unsurpassed by any rectifier previously available.
I 25 A
F(AV) With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
V 600 V
R
companion diode for IGBTs and MOSFETs. In addition to
V at I 1.3 V
F F
ultrafast recovery time, the HEXFRED product line features
t (typ.) 23 ns
rr
extremely low values of peak recovery current (I ) and
RRM
T max. 150 C
J
does not exhibit any tendency to snap-off during the
2
Package D PAK (TO-263AB)
t portion of recovery. The HEXFRED features combine to
b
Circuit configuration Single offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Cathode to anode voltage V 600 V
R
Maximum continuous forward current I T = 100 C 25
F C
Single pulse forward current I 225 A
FSM
Maximum repetitive forward current I 100
FRM
T = 25 C 125
C
Maximum power dissipation P W
D
T = 100 C 50
C
Operating junction and storage temperature range T , T -55 to +150 C
J Stg
Revision: 27-Oct-17 Document Number: 96311
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60S-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
V I = 100 A 600 - -
BR R
breakdown voltage
I = 25 A -1.3 1.7
F V
Maximum forward voltage V I = 50 A See fig. 1 - 1.5 2.0
FM F
I = 25 A, T = 125 C - 1.3 1.7
F J
V = V rated -1.5 20
Maximum reverse
R R
I See fig. 2 A
RM
leakage current
T = 125 C, V = 0.8 x V rated - 600 2000
J R R
Junction capacitance C V = 200 V See fig. 3 - 55 100 pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 -
rr F F R
Reverse recovery time
t T = 25 C -50 75 ns
rr1 J
See fig. 5
t T = 125 C - 105 160
rr2 J
I T = 25 C - 4.5 10
RRM1 J
Peak recovery current
A
See fig. 6
I T = 125 C I = 25 A - 8.0 15
RRM2 J F
dI /dt = 200 A/s
F
Q T = 25 C - 112 375
rr1 J
Reverse recovery charge
V = 200 V nC
R
See fig. 7
Q T = 125 C - 420 1200
rr2 J
Peak rate of fall recovery dI /dt1 T = 25 C - 250 -
(rec)M J
current during t A/s
b
dI /dt2 T = 125 C - 160 -
(rec)M J
See fig. 8
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T 0.063" from case (1.6 mm) for 10 s - - 300 C
lead
Thermal resistance,
R --1.0
thJC
junction-to-case
K/W
Thermal resistance,
R Typical socket mount - - 80
thJA
junction-to-ambient
-2.0 - g
Weight
-0.07 - oz.
2
Marking device Case style D PAK (TO-263AB) HFA25TB60S
Revision: 27-Oct-17 Document Number: 96311
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000