BAS16 RF Taiwan Semiconductor

BAS16 Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F High surge current capability V 75 V RRM RoHS Compliant I 2 A Halogen-free according to IEC 61249-2-21 FSM V at I =150mA 1.25 V F F T 150 C J MAX Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 0.5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS16 UNIT Marking code on the device A6 Repetitive peak reverse voltage V 75 V RRM Forward current I 150 mA F Non-repetitive peak forward surge current t = 0.001 s I 2 A FSM Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG 1 Version: F2001 BAS16 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 375 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.0mA, T = 25C 0.715 F J I = 10mA, T = 25C 0.855 F J (1) - Forward voltage V V F I = 50mA, T = 25C 1.000 F J I = 150mA, T = 25C 1.250 F J (2) - 1 Reverse current V =75V T = 25C I A R J R f=1 MHz, V =0V - 2 Junction capacitance R C pF J I =10mA, I = 60mA, F R 4 Reverse recovery time t ns rr I = 10%I ,R =100 RR R L Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS16 RF SOT-23 3K / 7 Reel BAS16 RFG SOT-23 3K / 7 Reel BAS16 R5 SOT-23 10K / 13 Reel BAS16 R5G SOT-23 10K / 13 Reel 2 Version: F2001