VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr AEC-Q101 qualified, meets JESD 201 class 1A whisker test Material categorization: for definitions of compliance please see TO-220AB www.vishay.com/doc 99912 BENEFITS Base Reduced RFI and EMI common cathode Reduced power loss in diode and switching transistor 2 Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 2 Common VS-HFA30TA60CHN3 is a state of the art center tap ultrafast cathode recovery diode. Employing the latest in epitaxial Anode Anode 13 construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the VS-HFA30TA60CHN3 is PRODUCT SUMMARY especially well suited for use as the companion diode for Package TO-220AB IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of I 2 x 15 A F(AV) peak recovery current (I ) and does not exhibit any RRM V 600 V R tendency to snap-off during the t portion of recovery. The b V at I 1.2 V F F HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in t typ. 19 ns rr both the diode and the switching transistor. These T max. 150 C J HEXFRED advantages can help to significantly reduce Diode variation Common cathode snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30TA60CHN3 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 15 Maximum continuous forward current I T = 100 C F C per device 30 A Single pulse forward current I 150 FSM Maximum repetitive forward current I 60 FRM T = 25 C 74 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 15-Jul-15 Document Number: 94511 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 15 A -1.3 1.7 F V Maximum forward voltage V I = 30 A See fig. 1 - 1.5 2.0 FM F I = 15 A, T = 125 C - 1.2 1.6 F J V = V rated -1.0 10 R R Maximum reverse I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 400 1000 J R R Junction capacitance C V = 200 V See fig. 3 - 25 50 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 19 - rr F F R Reverse recovery time t T = 25 C -42 60 ns rr1 J See fig. 5 and 10 t T = 125 C - 70 120 rr2 J I T = 25 C - 4.0 6.0 RRM1 J Peak recovery current A See fig. 6 I = 15 A I T = 125 C F - 6.5 10 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 80 180 Reverse recovery charge rr1 J V = 200 V nC R See fig. 7 Q T = 125 C - 220 600 rr2 J Peak rate of fall of dI /dt1 T = 25 C - 250 - (rec)M J recovery current during t A/s b dI /dt2 T = 125 C - 160 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Junction to case, 1.7 single leg conducting R thJC Junction to case, - - 0.85 both legs conducting K/W Thermal resistance, R Typical socket mount - - 40 thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.25 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AB HFA30TA60CH Revision: 15-Jul-15 Document Number: 94511 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000