VS-HFA50PA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 25 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD 47 1 2 Material categorization: 3 for definitions of compliance please see www.vishay.com/doc 99912 TO-247AC 3L BENEFITS Common Reduced RFI and EMI cathode Reduced power loss in diode and switching transistor 2, Base Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA50PA60C... is a state of the art center tap ultrafas t 13 recovery diode. Employing the latest in epitaxial Anode Anode construction and advanced processing techniques it 1 2 features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A PRIMARY CHARACTERISTICS per leg continuous current, the VS-HFA50PA60C... is especially well suited for use as the companion diode fo r I 2 x 25 A F(AV) IGBTs and MOSFETs. In addition to ultrafast recovery time, V 600 V R the HEXFRED product line features extremely low values of peak recovery current (I ) and does not exhibit any V at I 1.3 V RRM F F tendency to snap-off during the t portion of recovery. The b t typ. 23 ns rr HEXFRED features combine to offer designers a rectifier T max. 150 C with lower noise and significantly lower switching losses in J both the diode and the switching transistor. These Package TO-247AC 3L HEXFRED advantages can help to significantly reduce Circuit configuration Common cathode snubbing, component count and heatsink sizes. The HEXFRED VS-HFA50PA60C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 25 Maximum continuous forward current I T = 100 C F C per device 50 A Single pulse forward current I t = 10 ms 225 FSM p Maximum repetitive forward current I 100 FRM T = 25 C 150 C Maximum power dissipation P W D T = 100 C 60 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 11-Oct-2019 Document Number: 94074 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA50PA60C-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 25 A -1.3 1.7 F V Maximum forward voltage V I = 50 A See fig. 1 - 1.5 2.0 FM F I = 25 A, T = 125 C - 1.3 1.7 F J V = V rated -1.5 20 R R Maximum reverse I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 600 2000 J R R Junction capacitance C V = 200 V See fig. 3 - 55 100 pF T R Series inductance L Measured lead to lead 5 mm from package body - 12 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 - rr F F R Reverse recovery time t T = 25 C -50 75 ns rr1 J See fig. 5, 10 t T = 125 C - 105 160 rr2 J I T = 25 C - 4.5 10 RRM1 J Peak recovery current A I = 25 A See fig. 6 F I T = 125 C - 8.0 15 RRM2 J dI /dt = 200 A/s F Q T = 25 C - 112 375 Reverse recovery charge rr1 J nC V = 200 V R See fig. 7 Q T = 125 C - 420 1200 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 250 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 160 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Junction to case, - - 0.83 single leg conducting R thJC Junction to case, - - 0.42 both legs conducting K/W Thermal resistance, R Typical socket mount - - 40 thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.25 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 3L HFA50PA60C Revision: 11-Oct-2019 Document Number: 94074 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000