VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 210 A FEATURES Lug terminal Very low Q and t rr rr anode Designed and qualified for industrial level UL approved file E222165 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Base cathode BENEFITS HALF-PAK (D-67) Reduced RFI and EMI Reduced snubbing PRIMARY CHARACTERISTICS I (maximum) 210 A DESCRIPTION F V 400 V R HEXFRED diodes are optimized to reduce losses and I at T 106 A at 100 C F(DC) C EMI/RFI in high frequency power conditioning systems. An Package HALF-PAK (D-67) extensive characterization of the recovery behavior for different values of current, temperature and dI /dt simplifies F Circuit configuration Single diode the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage V 400 V R T = 25 C 210 C Continuous forward current I F T = 100 C 106 A C Single pulse forward current I Limited by junction temperature 600 FSM Non-repetitive avalanche energy E L = 100 H, duty cycle limited by maximum T 1.4 mJ AS J T = 25 C 329 C Maximum power dissipation P W D T = 100 C 132 C Operating junction and storage T , T -55 to +150 C J Stg temperature range ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown V I = 100 A 400 - - BR R voltage I = 90 A - 1.06 1.45 F V Maximum forward voltage V I = 180 A See fig. 1 - 1.2 1.67 FM F I = 90 A, T = 125 C - 0.96 1.23 F J Maximum reverse leakage current I T = 125 C, V = 400 V See fig. 2 - 0.6 2 mA RM J R Junction capacitance C V = 200 V See fig. 3 - 180 260 pF T R Series inductance L From top of terminal hole to mounting plane - 7.0 - nH S Revision: 11-Jan-18 Document Number: 94044 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C - 90 140 Reverse recovery time J t ns rr See fig. 5 T = 125 C - 158 240 J T = 25 C - 9 17 Peak recovery current J I A RRM I = 90 A See fig. 6 F T = 125 C - 15 30 J dI /dt = 200 A/s F T = 25 C - 420 1100 Reverse recovery charge J V = 200 V R Q nC rr See fig. 7 T = 125 C - 1200 3200 J T = 25 C - 370 - Peak rate of recovery current J dI /dt A/s (rec)M See fig. 8 T = 125 C - 270 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 0.38 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, flat, smooth, and greased 0.05 thCS case to heatsink 30 g Approximate weight 1.06 oz. minimum Non-lubricated threads 3 (26.5) Mounting torque maximum 4 (35.4) N m (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK (D-67) 10 000 1000 T = 150 C J 1000 T = 125 C 100 J 100 10 1 0.1 10 T = 150 C J 0.01 T = 125 C J T = 25 C J T = 25 C J 0.001 0.0001 1 400 100 200 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 94044 02 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R 94044 01 FM Fig. 1 - Maximum Forward Voltage Drop vs. Fig. 2 - Typical Reverse Current vs. Reverse Voltage Instantaneous Forward Current Revision: 11-Jan-18 Document Number: 94044 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R