SMD Ultra Fast Recovery Rectifiers CURA101-HF Thru. CURA107-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free DO-214AC (SMA) Features 0.177(4.50) - Ideal for surface mount applications. 0.157(3.99) - Easy pick and place. 0.065(1.65) 0.110(2.79) - Plastic package has Underwriters Lab. 0.049(1.25) 0.100(2.54) flammability classification 94V-0. - Ultra fast recovery time: 50~100nS. - Low leakage current. 0.208(5.28) 0.193(4.90) 0.012(0.305) 0.006(0.152) Mechanical data 0.090(2.29) - Case: JEDEC DO-214AC, molded plastic. 0.078(1.98) - Terminals: solderable per MIL-STD-750, 0.005(0.127)Max 0.060(1.52) 0.030(0.76) method 2026. - Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) - Approx. weight: 0.064 grams Maximum Ratings and Electrical Characteristics CURA CURA CURA CURA CURA CURA CURA Parameter Symbol Units 101-HF 102-HF 103-HF 104-HF 105-HF 106-HF 107-HF Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed IFSM 30 A on rate load (JEDEC method) Max. average forward rectified current I(AC) 1.0 A At TA = 55C Max. instantaneous forward voltage per at 1.0 1.3 VF 1.7 V 1.0A Reverse recovery time Trr 50 100 nS Typical Junction Capacitance CJ 20 15 nS (Measured at 1.0MHz and applied reves voltage of 4.0V) O Max. DC reverse current at TA=25 C 5.0 IR A O rated DC blocking voltage TA=100 C 100 R JL 88 C/W Typical Thermal Resistance(Note 1) R JL 28 C/W -55 to +150 Operating junction temperature TJ C TSTG Storage temperature -55 to +150 C Notes: 1. Thermal resistance from junction to lead. REV:A QW-JU001 Page 1 Comchip Technology CO., LTD.CRUA101-G~CURA103-G CRUA103-G~CURA107-G SMD Ultra Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CURA101-HF thru CURA107-HF) Fig.1- Typical Forward Current Derating Curve Fig.2 - Maximum NON-Repetitive Peak Forward Surge Current 1.4 O TJ=25 C 8.3ms single half sine 1.2 wave, JEDEC method 30 1.0 0.8 20 0.6 Single phase 0.4 Half wave 60Hz 10 0.2 1cycle 0 55 0 1 2 4 10 20 40 100 0 25 50 75 100 125 150 175 Number of Cycles at 60Hz Ambient Temperature, (C) Fig.4 - Typical Reverse Characteristics Fig.3 - Typical Instantaneous Forward Characteristics 100 100 10 10 O TJ=100 C 1 1 0.1 O TJ=25 C O Pulse width 300 S TJ=25 C 1% duty cycle 0.1 0.01 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Junction Capacitance Fig.6 - Test Circuit Diagram and Reverse Recovery Time Characteristic 1000 trr 50 10 NONINDUCTIVE NONINDUCTIVE +0.5A (-) (+) 0 D.U.T. 25Vdc PULSE (approx.) GENERATOR (-) 100 -0.25A (NOTE 2) (+) 1 OSCILLLISCOPE NON- (NOTE 1) INDUCTIVE NOTES: 1. Rise time=7ns max., input impedance=1 M , 22pF. -1.0A 1cm 2. Rise time=10ns max.,Source impedance=50 . Set time base for 50 / 100nS / cm 10 0.1 1.0 10 100 Reverse Voltage, (V) REV:A QW-JU001 Page 2 Comchip Technology CO., LTD. 800V/1000V 50/100/200V 300/400V 600V Junction capacitance,(pF) Average Forward Current, (A) Forward Curren t(A) Instaneous Reverse Current, (A) Peak Forward Surge Current, (C)
