BYV29-400,127 WeEn Semiconductor

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors BYV29-400 Ultrafast power diode Rev. 3 29 May 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits Fast switching Low thermal resistance High thermal cycling performance Soft recovery minimizes power-consuming oscillations Low forward volt drop 1.3 Applications Discontinuous Current Mode (DCM) Output rectifiers in high-frequency Power Factor Correction (PFC) switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse voltage - - 400 V RRM I average forward current square-wave pulse =0.5 --9 A F(AV) T 123 C see Figure 1 mb see Figure 2 Static characteristics V forward voltage I =8A T = 150 C see Figure 4 - 0.9 1.03 V F F j Dynamic characteristics t reverse recovery time I =1A V =30V dI /dt = 100 A/s - 5060ns rr F R F T = 25 C see Figure 7 see Figure 5 j TO-220AC