PH2925U Nexperia

PH2925U N-channel TrenchMOS ultra low level FET Rev. 04 24 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Low conduction losses due to low thermal resistance on-state resistance Interfaces directly with low voltage gate drivers 1.3 Applications DC-to-DC convertors Portable equipment Notebook computers Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 25 V DS j j I drain current T =25C V =4.5 V - - 100 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 62.5 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =50A - 20.2 - nC GD GS D V =10V T =25C DS j see Figure 10 see Figure 11 Static characteristics R drain-source V = 4.5 V I =25A -2.3 3 m DSon GS D on-state resistance T = 25 C see Figure 8 j see Figure 9NXP Semiconductors PH2925U N-channel TrenchMOS ultra low level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH2925U LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 25 V DS j j V drain-gate voltage T 150 C T 25 C R =20k -25 V DGR j j GS V gate-source voltage -10 10 V GS I drain current V =4.5 V T = 100 C see Figure 1 -70 A D GS mb V =4.5 V T =25 C see Figure 1 -100 A GS mb see Figure 3 I peak drain current t 10 s pulsed T =25C see Figure 3 -300 A DM p mb P total power dissipation T =25C see Figure 2 -62.5 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current t 10 s pulsed T =25C - 150 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =70.7A V 25 V -250 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t = 0.22 ms R =50 p GS energy PH2925U 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 24 February 2009 2 of 12