PH2630CL,115 NXP

PH2625L N-channel 25 V 2.8 m logic level MOSFET in LFPAK Rev. 3 21 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic TM package using TrenchMOS technology 1.2 Features and benefits Low thermal resistance Optimized for use in DC-to-DC converters Low threshold voltage Very low switching and conduction losses 1.3 Applications DC-to-DC convertors Switched-mode power supplies Notebook computers Voltage regulators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150C --25 V DS j j I drain current T =25C; V =10V; see Figure 1; - - 100 A D mb GS see Figure 3 Static characteristics R drain-source on-state V =10V; I =25A; T =25C; -2 2.8 m DSon GS D j resistance see Figure 9; see Figure 10 V =4.5 V; I =25A; T =25C; -3 4.1 m GS D j see Figure 9; see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V; I =25A; V =12V; -7.3 -nC GD GS D DS see Figure 11; see Figure 12 Q total gate charge - 32 - nC G(tot) LFPAKPH2625L NXP Semiconductors N-channel 25 V 2.8 m logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base; 1234 connected to drain SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH2625L LFPAK; plastic single-ended surface-mounted package; 4 leads SOT669 Power-SO8 PH2625L All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 21 December 2011 2 of 15