X-On Electronics has gained recognition as a prominent supplier of PHB101NQ04T,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHB101NQ04T,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHB101NQ04T,118 NXP

PHB101NQ04T,118 electronic component of NXP
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Part No.PHB101NQ04T,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET N-CH TRENCH 40V
Datasheet: PHB101NQ04T,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.5795 ea
Line Total: USD 1263.6 
Availability - 0
MOQ: 800  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 800
Multiples : 1
800 : USD 1.5795
800 : USD 1.5795
800 : USD 1.5795
800 : USD 1.5795
1600 : USD 1.5795
4000 : USD 1.5795

   
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Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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We are delighted to provide the PHB101NQ04T,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHB101NQ04T,118 and other electronic components in the MOSFETs category and beyond.

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PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 157 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A - 12.6 - nC GD GS D V =32V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -6.6 8 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10NXP Semiconductors PHB101NQ04T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB101NQ04T D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -40 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -71 A D GS mb V =10V T =25C see Figure 1 -75 A GS mb see Figure 3 I peak drain current t 10 s pulsed T =25C see Figure 3 -240 A DM p mb P total power dissipation T =25C see Figure 2 -157 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 75 A S mb I peak source current t 10 s pulsed T =25C - 240 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =45A V 55 V -200 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t = 0.17 ms R =50 p GS energy PHB101NQ04T 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 March 2009 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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