PH6325L,115 NXP

PH6325L N-channel 25 V 6.3 m logic level MOSFET in LFPAK Rev. 2 22 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TM TrenchMOS technology 1.2 Features and benefits Low thermal resistance Optimized for use in DC-to-DC converters Low threshold voltage Very low switching and conduction losses 1.3 Applications DC-to-DC convertors Switched-mode power supplies Notebook computers Voltage regulators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --25 V DS j j I drain current T =25C V =10 V see Figure 1 - - 78.7 A D mb GS see Figure 3 P total power dissipation T =25C see Figure 2 - - 62.5 W tot mb Static characteristics R drain-source on-state resistance V =4.5 V I =25 A T =25C -7.4 9.5 m DSon GS D j see Figure 9 see Figure 10 V =10 V I =25A T =25C -4.7 6.3 m GS D j see Figure 9 see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =12V see -3.3 -nC GD GS D DS Figure 11 see Figure 12 Q total gate charge - 13.3 - nC G(tot) LFPAKPH6325L NXP Semiconductors N-channel 25 V 6.3 m logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH6325L LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PH6325L All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 22 December 2011 2 of 14