Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHB191NQ06LT N-channel TrenchMOS logic level FET Rev. 02 13 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 300 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =25A - 37.6 - nC GD GS D V =44V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -3.1 3.7 m DSon GS D on-state resistance T =25C j see Figure 10 and 9