PHD13003C,412 NXP

PHD13003C NPN power transistor with integrated diode Rev.02 - 29 May 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. 2. Features and benefits High typical DC current gain Fast switching High voltage capability Integrated anti-parallel E-C diode 3. Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V collector-emitter peak V = 0 V 700 V CESM BE voltage I DC 1.5 A C collector current P total power dissipation T 25 C Fig. 1 2.1 W tot lead Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 0.5 A V = 2 V T = 25 C 8 17 25 FE C CE jWeEn Semiconductors PHD13003C NPN power transistor with integrated diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 2 C collector 3 E emitter 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 PHD13003C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 May 2018 2 / 13