X-On Electronics has gained recognition as a prominent supplier of PHD13003C across the USA, India, Europe, Australia, and various other global locations. PHD13003C are a product manufactured by NXP. We provide cost-effective solutions for PHD13003C, ensuring timely deliveries around the world.

PHD13003C NXP

PHD13003C electronic component of NXP
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See Product Specifications
Part No.PHD13003C
Manufacturer: NXP
Category: Unclassified
Description: TRANSISTOR,DIODE,NPN,400V,1.5A,TO92
Datasheet: PHD13003C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.2903
100 : USD 0.1376
1000 : USD 0.1051
2500 : USD 0.0877
10000 : USD 0.0794

   
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PHD13003C from our NXP manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHD13003C and other electronic components in the NXP manufacturer and beyond.

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PHD13003C NPN power transistor with integrated diode Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current gain Integrated anti-parallel E-C diode 1.3 Applications Compact fluorescent lamps (CFL) Off-line self-oscillating power supplies (SOPS) for battery charging Low power electronic lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC - - 1.5 A C P total power T 25 C see Figure 1 --2.1 W tot lead dissipation V collector-emitter V=0V --700V CESM BE peak voltage Static characteristics h DC current gain I = 0.5 A V =2V 817 25 FE C CE T =25C jPHD13003C NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 3E emitter B E sym131 3 2 1 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC - 1.5 A C I peak collector current - 3 A CM I base current DC - 0.75 A B I peak base current - 1.5 A BM P total power dissipation T 25 C see Figure 1 -2.1 W tot lead T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I = 0 A I(Emitter) = 10 mA - 9 V EBO C PHD13003C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 29 July 2010 2 of 12

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