PHD13005 NXP

PHD13005 NPN power transistor with integrated diode Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High voltage capability Low thermal resistance 1.3 Applications Integrated fluorescent lamp ballasts Remote fluorescent lamp ballasts e.g. high power cluster lamps Self Oscillating Power Supplies Low Voltage Tungsten Halogen transformers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 --4 A C see Figure 4 DC P total power see Figure 3 T 25C --75 W tot mb dissipation V collector-emitter V=0V --700V CESM BE peak voltage Static characteristics h DC current gain V =5V I =1.0A 12 20 40 FE CE C see Figure 10 V =5V I =2.0A 10 17 28 CE C see Figure 10PHD13005 NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 2 C collector 3E emitter B mb C mounting base connected to collector E sym131 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13005 TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC see Figure 1 see Figure 2 see Figure 4 -4 A C I peak collector current see Figure 4 see Figure 1 see Figure 2 -8 A CM I base current DC - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -75 W tot mb T storage temperature -65 150 C stg T junction temperature - 150 C j PHD13005 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 14