Product Information

PH1955L,115

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Datasheet

Trans MOSFET N-CH 55V 40A 5-Pin(4+Tab) LFPAK T/R

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

11: USD 3.657 ea
Line Total: USD 40.23

0 - Global Stock

MOQ: 11 Multiples: 1
Pack Size: 1

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Additional Infomation About Product

PH1955L N-channel TrenchMOS logic level FET Rev. 02 25 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for thermally demanding on-state resistance environments due to 175 C rating Suitable for logic level gate drive sources 1.3 Applications 12 V and 24 V loads General purpose power switching DC-to-DC convertors Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 55 V DS j j I drain current T =25C; V =5V; --40 A D mb GS see Figure 1; see Figure 3 P total power T = 25 C; see Figure 2 --75 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V; I =25A; -8 -nC GD GS D V =44V; T =25C; DS j see Figure 9 Static characteristics R drain-source V =10V; I =25A; - 14.3 17.3 m DSon GS D on-state resistance T = 25 C; see Figure 7; j see Figure 8NXP Semiconductors PH1955L N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base; connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH1955L LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 PH1955L_2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 25 February 2009 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Id - Continuous Drain Current 40 A 40 A
Transistor Polarity N N
Pd - Power Dissipation 75 W 75 W
Mounting Style Surface Mount Surface Mount
Packaging Tape And Reel Tape And Reel
Channel Mode Enhancement Enhancement
Gate-Source Voltage Max 15 V 15 V
Drain-Source On-Res 0.0173(Ohm) 0.0173(Ohm)
Operating Temp Range - 55 C to 175 C - 55 C to 175 C
Package Type LFPAK LFPAK
Pin Count 4 + Tab 4 + Tab
Type Power Mosfet Power Mosfet
Number Of Elements 1 1
Operating Temperature Classification military military
Drain-Source On-Volt 55(V) 55(V)
Rad Hardened No No