Product Information

PH20100S,115

PH20100S,115 electronic component of NXP

Datasheet
MOSFET N-CH TRENCH 100V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.5758 ea
Line Total: USD 863.7

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.5758

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

PH20100S N-channel TrenchMOS standard level FET Rev. 03 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Simple gate drive required due to low thermal resistance gate charge current Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C - - 100 V DS j j I drain current T =25C; V =10V; - - 34.3 A D mb GS see Figure 2; see Figure 1 P total power T = 25 C - - 62.5 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V; I =20A; -8.9 -nC GD GS D V =50V; T =25C; DS j see Figure 11 Static characteristics R drain-source V =10V; I =10A; - 1923m DSon GS D on-state resistance T = 25 C; see Figure 8; j see Figure 9NXP Semiconductors PH20100S N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base; connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH20100S LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 150 C - 100 V DS j j V gate-source voltage -20 20 V GS I drain current V =10V; T = 100 C; see Figure 2 -21.6 A D GS mb V =10V; T =25C; see Figure 2; -34.3 A GS mb see Figure 1 I peak drain current t 10 s; pulsed; T =25C; see Figure 1 -137 A DM p mb P total power dissipation T =25C - 62.5 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current t 10 s; pulsed; T =25C - 137 A SM p mb Avalanche ruggedness E non-repetitive V =10V; T =25C; I =12A; V 100 V; -250 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped; t =0.3 ms p energy PH20100S_3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 2 February 2009 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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