X-On Electronics has gained recognition as a prominent supplier of FW216A-TL-2W MOSFETs across the USA, India, Europe, Australia, and various other global locations. FW216A-TL-2W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FW216A-TL-2W ON Semiconductor

FW216A-TL-2W electronic component of ON Semiconductor
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Part No.FW216A-TL-2W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH+NCH 4V DRIVE SER
Datasheet: FW216A-TL-2W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2842 ea
Line Total: USD 0.28 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2842

   
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We are delighted to provide the FW216A-TL-2W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FW216A-TL-2W and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA0176C FW216A N-Channel Power MOSFET FW216A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 35 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =35V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.5 2.5 V GS DS D Forward Transfer Admittance | yfs | V =10V, I =4.5A 2.6 S DS D R (on)1 I =4.5A, V =10V 49 64 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =2A, V =4.5V 80 112 m DS D GS R (on)3 I =2A, V =4.0V 100 140 m DS D GS Input Capacitance Ciss 280 pF Output Capacitance Coss V =10V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time t (on) 6ns d Rise Time t 21 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 20 ns d Fall Time t 10 ns f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs V =10V, V =10V, I =4.5A 1.2 nC DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Diode Forward Voltage V I =4.5A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V =15V V IN DD 10V 0V I =4.5A D V IN R =3.3 L D V OUT PW=10s D.C.1% G FW216A P.G 50 S Ordering Information Device Package Shipping memo FW216A-TL-2W SOIC8 2,500pcs./reel Pb Free and Halogen Free No. A0176-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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