Ordering number : ENA0176C
FW216A
N-Channel Power MOSFET
FW216A
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V I =1mA, V =0V 35 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =35V, V =0V 1 A
DSS DS GS
Gate to Source Leakage Current I V =16V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =10V, I =1mA 1.5 2.5 V
GS DS D
Forward Transfer Admittance | yfs | V =10V, I =4.5A 2.6 S
DS D
R (on)1 I =4.5A, V =10V 49 64 m
DS D GS
Static Drain to Source On-State Resistance R (on)2 I =2A, V =4.5V 80 112 m
DS D GS
R (on)3 I =2A, V =4.0V 100 140 m
DS D GS
Input Capacitance
Ciss 280 pF
Output Capacitance
Coss V =10V, f=1MHz 60 pF
DS
Reverse Transfer Capacitance
Crss 30 pF
Turn-ON Delay Time
t (on) 6ns
d
Rise Time
t 21 ns
r
See speci ed Test Circuit.
Turn-OFF Delay Time
t (off) 20 ns
d
Fall Time
t 10 ns
f
Total Gate Charge Qg 5.6 nC
Gate to Source Charge
Qgs V =10V, V =10V, I =4.5A 1.2 nC
DS GS D
Gate to Drain Miller Charge
Qgd 0.8 nC
Diode Forward Voltage V I =4.5A, V =0V 0.85 1.2 V
SD S GS
Switching Time Test Circuit
V =15V
V
IN DD
10V
0V
I =4.5A
D
V
IN
R =3.3
L
D V
OUT
PW=10s
D.C.1%
G
FW216A
P.G
50 S
Ordering Information
Device Package Shipping memo
FW216A-TL-2W SOIC8 2,500pcs./reel Pb Free and Halogen Free
No. A0176-2/5