FW297 Power MOSFET www.onsemi.com 60V, 58m , 4.5A, Dual N-Channel V R (on) Max I DSS DS D Max Features 58m 10V Low On-Resistance 60V 84m 4.5V 4.5A 4.0V Drive 95m 4.0V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications N-Channel 876 5 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit 1:Source1 2:Gate1 Drain to Source Voltage V 60V DSS 3:Source2 4:Gate2 Gate to Source Voltage V 20 V GSS 5:Drain2 Drain Current (DC) I 4.5A D 6:Drain2 7:Drain1 Drain Current (Pulse) 8:Drain1 A I 18 DP PW 10s, duty cycle 1% 1 234 Power Dissipation When mounted on ceramic substrate P 1.8 W D 2 (2000mm 0.8mm) 1 unit, PW10s Packing Type : TL Marking Total Dissipation When mounted on ceramic substrate P 2.2 W T 2 (2000mm 0.8mm) , PW10s C Junction Temperature Tj 150 FW297 Storage Temperature Tstg 55 to +150 C LOTNo. TL Thermal Resistance Ratings Unit Parameter Symbol Value 1 69.4 Junction to Ambient 1 unit, PW10s * R JA C/W 1 Junction to Ambient 2 units, PW10s * R 56.8 JA 1 2 Note: * When mounted on ceramic substrate (2000mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : April 2015 - Rev. 0 FW297/D FW297 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=4.5A 4.7 S FS DS D R(on)1 I =4.5A, V=10V 45 58m DS D GS Static Drain to Source On-State Resistance R(on)2 I =2A, V=4.5V 60 84m DS D GS R(on)3 I =2A, V=4.0V 68 95m DS D GS Input Capacitance Ciss 750 pF Output Capacitance Coss V =20V, f=1MHz 59 pF DS Reverse Transfer Capacitance Crss 47 pF Turn-ON Delay Time t (on) 7 ns d Rise Time t 16 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 50 ns d Fall Time t 30 ns f Total Gate Charge Qg 14 nC Gate to Source Charge Qgs V =30V, V =10V, I =4.5A 2.3 nC DS GS D Gate to Drain Miller Charge Qgd 2.8 nC Forward Diode Voltage V I =4.5A, V=0V 0.81 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =30V V DD IN 10V 0V I =4.5A D V IN R =6.67 L V OUT D PW=10s D.C.1% G FW297 P.G 50 S www.onsemi.com 2