AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary TM V 100V DS The AON7452 is fabricated with SDMOS trench I (at V =10V) 5.5A technology that combines excellent R with low gate DS(ON) D GS charge and low Qrr.The result is outstanding efficiency R (at V =10V) < 310m DS(ON) GS with controlled switching behavior. This universal R (at V =7V) < 370m DS(ON) GS technology is well suited for PWM, load switching and general purpose applications. 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 G 4 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V 25 V GS T =25C 5.5 C Continuous Drain I D Current T =100C 3.5 A C C Pulsed Drain Current I 12 DM T =25C 2.5 A Continuous Drain I A DSM Current T =70C 2 A C Avalanche Current I , I 2.5 A AS AR C Avalanche energy L=0.1mH E , E 0.3 mJ AS AR T =25C 17 C P W D B Power Dissipation T =100C 7 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 6 7.2 C/W JC Rev 1: April 2011 www.aosmd.com Page 1 of 7 AON7452 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V DSS D GS V =100V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J I Gate-Body leakage current V =0V, V = 25V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 3.3 4 4.7 V GS(th) DS GS D I On state drain current V =10V, V =5V 12 A D(ON) GS DS V =10V, I =2.5A 255 310 GS D m R Static Drain-Source On-Resistance T =125C 404 485 DS(ON) J V =7V, I =2A 296 370 m GS D g Forward Transconductance V =5V, I =2.5A 3.5 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.8 1 V SD S GS I Maximum Body-Diode Continuous Current 15 A S DYNAMIC PARAMETERS C Input Capacitance 125 155 185 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 20 28 36 pF GS DS oss C Reverse Transfer Capacitance 5 9 13 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 2.4 3 4 nC g V =10V, V =50V, I =2.5A Q Gate Source Charge 1 1.3 1.6 nC GS DS D gs Q Gate Drain Charge 0.5 0.9 1.3 nC gd t Turn-On DelayTime 4 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =20, 4.5 ns r GS DS L R =3 t Turn-Off DelayTime 8.5 ns GEN D(off) t Turn-Off Fall Time 2 ns f t I =2.5A, dI/dt=500A/s 6.7 rr Body Diode Reverse Recovery Time F 9.6 13 ns Q I =2.5A, dI/dt=500A/s 16 nC rr Body Diode Reverse Recovery Charge F 23 30 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM JA application depends on the user s specific board design, and the maximum temperature of 150C may be u sed if the PCB allows it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: April 2011 www.aosmd.com Page 2 of 7