AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary V 60V The AOT1608L/AOB1608L uses a robust technology that DS is designed to provide efficient and reliable power I (at V =10V) 140A D GS conversion even in the most demanding applications, R (at V =10V) < 7.6m DS(ON) GS including motor control. With low R and excellent DS(ON) thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. 100% UIS Tested 100% R Tested g TTOO--226633 TTOO222200 22 DD PPAAKK DD TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww BBoottttoomm VViieeww DD DD DD DD GG SS GG SS SS GG DD DD GG SS GG SS Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 6600 VV DS Gate-Source Voltage V 20 V GS T =25C 140 Continuous Drain C I D G T =100C Current 100 A C C Pulsed Drain Current I 256 DM T =25C 11 A Continuous Drain I A DSM Current T =70C 9 A C Avalanche Current I , I 113 A AS AR C Avalanche energy L=0.1mH E , E 638 mJ AS AR T =25C 333 C P W D B T =100C Power Dissipation 166 C T =25C 2.1 A P W DSM A Power Dissipation T =70C 1.3 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 12 15 C/W R A D JA Maximum Junction-to-Ambient Steady-State 48 60 C/W Steady-State Maximum Junction-to-Case R 0.35 0.45 C/W JC Rev0: May 2011 www.aosmd.com Page 1 of 6 AOT1608L/AOB1608L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250 Gate Threshold Voltage 2.5 3.1 3.7 V GS(th) DS GS D I On state drain current V =10V, V =5V 256 A GS DS D(ON) V =10V, I =20A 6.6 7.6 GS D m TO220 T =125C 11.4 13.2 J R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D TO263 6.3 7.3 m g Forward Transconductance V =5V, I =20A 51 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 140 A S DYNAMIC PARAMETERS C Input Capacitance 2450 3069 3690 pF iss V =0V, V =25V, f=1MHz C Output Capacitance 500 721 945 pF GS DS oss C Reverse Transfer Capacitance 30 56 80 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.5 2.9 4.4 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 54 69 84 nC g V =10V, V =30V, I =20A Q Gate Source Charge 15 nC GS DS D gs Q Gate Drain Charge 21 nC gd t Turn-On DelayTime 18 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==3300VV,, RR ==11..55,, 2255 nnss r GS DS L R =3 t Turn-Off DelayTime 47 ns D(off) GEN t Turn-Off Fall Time 11 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 28 40 52 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 245 355 465 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. Maximum UIS current limited by test equipment. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package is 120A. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2011 www.aosmd.com Page 2 of 6