X-On Electronics has gained recognition as a prominent supplier of AON7752 MOSFETs across the USA, India, Europe, Australia, and various other global locations. AON7752 MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AON7752 Alpha & Omega

AON7752 electronic component of Alpha & Omega
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Part No.AON7752
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 16A 8-Pin DFN EP T/R
Datasheet: AON7752 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.1102 ea
Line Total: USD 551 
Availability - 0
MOQ: 5000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 5000
Multiples : 1
5000 : USD 0.1102

0
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 62
Multiples : 62
62 : USD 0.1695
100 : USD 0.161
250 : USD 0.1578

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Pin Count
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Package Type
Type
Drain-Source On-Volt
Gate-Source Voltage Max
Rad Hardened
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We are delighted to provide the AON7752 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AON7752 and other electronic components in the MOSFETs category and beyond.

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AON7752 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Integrated Schottky Diode (SRFET) I (at V =10V) 16A D GS Very Low R (on) at 4.5V DS GS R (at V =10V) < 8.2m DS(ON) GS Low Gate Charge R (at V = 4.5V) < 14.5m DS(ON) GS High Current Capability RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP D Top View Bottom View Top View TM SRFET 1 8 Soft Recovery MOSFET: 2 7 Integrated Schottky Diode 3 6 4 5 G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GGSS T =25C 16 Continuous Drain C I D G Current T =100C 12 A C C Pulsed Drain Current I 64 DM T =25C 15 A Continuous Drain I A DSM T =70C Current 12 A C Avalanche Current I 22 A AS C Avalanche energy L=0.05mH E 12 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 20 C P W D B T =100C Power Dissipation 8.3 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A D JA Maximum Junction-to-Ambient Steady-State 60 75 C/W Maximum Junction-to-Case Steady-State R 5 6 C/W JC www.aosmd.com Rev 0 : April 2012 Page 1 of 6 AON7752 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 30 V D GS DSS V =30V, V =0V 0.5 DS GS I Zero Gate Voltage Drain Current mA DSS T =55C 100 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.5 2 2.5 V GS(th) DS GS D V =10V, I =16A 6.8 8.2 GS D m R Static Drain-Source On-Resistance T =125C 9.8 12 DS(ON) J V =4.5V, I =10A 11.6 14.5 m GS D V =5V, I =16A g Forward Transconductance 62 S FS DS D I =0.2A,V =0V V Diode Forward Voltage 0.45 0.65 V SD S GS G I Maximum Body-Diode Continuous Current 16 A S DYNAMIC PARAMETERS C Input Capacitance 605 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 275 pF oss GS DS C Reverse Transfer Capacitance 36.5 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 11 15 nC g Q (4.5V) Total Gate Charge 5.5 8 nC g V =10V, V =15V, I =16A GS DS D Q Gate Source Charge 2 nC gs Q Gate Drain Charge 2.6 nC gd t Turn-On DelayTime 5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.9, 2.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1177 nnss D(off) GEN t Turn-Off Fall Time 3 ns f t I =16A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 11.5 ns Q I =16A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 12.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : April 2012 www.aosmd.com Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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