Ordering number : EN8994B FW217A N-Channel Power MOSFET FW217A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 35 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =35V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.7 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =6A 3 S DS D R (on)1 I =6A, V =10V 30 39 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =3A, V =4.5V 50 70 m DS D GS Input Capacitance Ciss 470 pF Output Capacitance Coss V =20V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time t (on) 8ns d Rise Time t 34 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 31 ns d Fall Time t 30 ns f Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =20V, V =10V, I =6A 2nC DS GS D Gate-to-Drain Miller Charge Qgd 2nC Diode Forward Voltage V I =6A, V =0V 0.84 1.2 V SD S GS Switching Time Test Circuit V V =20V DD IN 10V 0V I =6A D V IN R =3 L D V OUT PW=10s D.C.1% G FW217A P.G 50 S Ordering Information Device Package Shipping memo FW217A-TL-2W SOIC8 2,500pcs./reel Pb Free and Halogen Free No.8994-2/7