AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design V (V) = 30V DS to provide excellent R with low gate charge. This I = 24A (V = 10V) DS(ON) D GS device is suitable for use in DC - DC converters and Load R < 20m (V = 10V) DS(ON) GS Switch applications. R < 26m (V = 4.5V) DS(ON) GS RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View D Top View 1 8 2 7 3 6 4 5 G PPiinn 11 SS Orderable Part NumberOrderable Part Number Package TypePackage Type FormForm Minimum Order QuantityMinimum Order Quantity AON7410 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C 24 Continuous Drain C B Current T =100C I 15 C D C Pulsed Drain Current I 50 A DM T =25C 9.5 Continuous Drain A A Current T =70C I 7.7 A DSM C Avalanche Current I , I 17 A AS AR C Repetitive avalanche energy L=0.1mH E , E 14 mJ AS AR T =25C 20 C P D B Power Dissipation T =100C 8.3 C W T =25C 3.1 A P DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A JA Steady-State Maximum Junction-to-Ambient 60 75 C/W B Steady-State R 5 6 C/W Maximum Junction-to-Case JC Rev.12.0: August 2014 www.aosmd.com Page 1 of 6Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.4 1.8 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 50 A GS DS D(ON) V =10V, I =8A 16 20 GS D R Static Drain-Source On-Resistance T =125C 24 29 m DS(ON) J V =4.5V, I =7A 21 26 GS D g Forward Transconductance V =5V, I =8A 30 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V S GS SD I Maximum Body-Diode Continuous Current 20 A S DYNAMIC PARAMETERS C Input Capacitance 440 550 660 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 77 110 143 pF GS DS oss C Reverse Transfer Capacitance 33 55 77 pF rss V =0V, V =0V, f=1MHz R Gate resistance 3 4 4.9 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 7.8 9.8 12 nC g Q (4.5V) Total Gate Charge 3.6 4.6 5.5 nC g V =10V, V =15V, I =8A GS DS D Q Gate Source Charge 1.4 1.8 2.2 nC gs Q Gate Drain Charge 1.3 2.2 3 nC gd tt Turn-On DelayTimeTurn-On DelayTime 55 nsns D(on)D(on) V =10V, V =15V, R =2, t Turn-On Rise Time 3.2 ns r GS DS L R =3 t Turn-Off DelayTime 24 ns GEN D(off) t Turn-Off Fall Time 6 ns f t I =8A, dI/dt=500A/s 7 9 11 rr Body Diode Reverse Recovery Time F ns Q I =8A, dI/dt=500A/s 12 15 18 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC 150 E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. J(MAX) G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. Rev12: Jul-2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.12.0: August 2014 Rev.12.0: August 2014 www.aosmd.comwww.aosmd.com Page 2 of 6Page 2 of 6