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V = - 10 V, DS(on) GS produced using Fairchild Semiconductor s proprietary I = - 13.5 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 33 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 120 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching 175 C Maximum Junction Temperature Rating power applications. S G G D TO-220 S D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP27P06 Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -27 A D C - Continuous (T = 100C) -19.1 A C I (Note 1) Drain Current - Pulsed -108 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 560 mJ AS I Avalanche Current (Note 1) -27 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25C) 120 W D C - Derate above 25C 0.8 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP27P06 Unit R Thermal Resistance, Junction-to-Case, Max. 1.25 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP27P06 Rev.C0