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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP30N06L N-Channel QFET MOSFET November 2013 FQP30N06L N-Channel QFET MOSFET 60 V, 32 A, 35 m Description Features This N-Channel enhancement mode power MOSFET is 32 A, 60 V, R = 35 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 16 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 15 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 50 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, 175C Maximum Junction Temperature Rating audio amplifier, DC motor control, and variable switching power applications. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP30N06L Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 32 A D C - Continuous (T = 100C) 22.6 A C I (Note 1) Drain Current - Pulsed 128 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 350 mJ AS I Avalanche Current (Note 1) 32 A AR E (Note 1) Repetitive Avalanche Energy 7.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25C) 79 W D C - Derate above 25C 0.53 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQP30N06L Unit R Thermal Resistance, Junction-to-Case, Max. 1.90 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP30N06L Rev. C1