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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP27N25 N-Channel QFET MOSFET November 2013 FQP27N25 N-Channel QFET MOSFET 250 V, 25.5 A, 110 m Description Features This N-Channel enhancement mode power MOSFET is 25.5 A, 250 V, R = 110 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 12.75 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 50 nC) MOSFET technology has been especially tailored to reduce Low Crss (Typ. 45 pF) on-state resistance, and to provide superior switching performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP27N25 Unit V Drain-Source Voltage 250 V DSS I - Continuous (T = 25C) Drain Current 25.5 A D C - Continuous (T = 100C) 16.2 A C I (Note 1) Drain Current - Pulsed 102 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 600 mJ AS I Avalanche Current (Note 1) 25.5 A AR E (Note 1) Repetitive Avalanche Energy 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 180 W D C - Derate above 25C 1.43 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQP27N25 Unit R Thermal Resistance, Junction-to-Case, Max. 0.7 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP27N25 Rev. C1