MOSFET N-Channel, QFET 100 V, 48 A, 39 m FQH44N10 Description This NChannel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS www.onsemi.com technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior V R MAX I MAX DSS DS(ON) D switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio 100 V 39 m 10 V 48 A amplifier, DC motor control, and variable switching power applications. D Features 48 A, 100 V, R = 39 m (Max.) V = 10 V, DS(on) GS I = 24 A D Low Gate Charge (Typ. 48 nC) G Low Crss (Typ. 85 pF) 100% Avalanche Tested S 175C Maximum Junction Temperature Rating POWER MOSFET G D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FQH 44N10 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FQH44N10 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: March, 2021 Rev. 5 FQH44N10/DFQH44N10 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter FQH44N10133 Unit V DrainSource Voltage 100 V DSS I Drain Current Continuous (T = 25C) 48 A D C Continuous (T = 100C) 34 C I Drain Current Pulsed (Note 1) 192 A DM V GateSource Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 530 mJ AS I Avalanche Current (Note 1) 48 A AR E Repetitive Avalanche Energy (Note 1) 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 180 W D C Derate Above 25C 1.2 W/C T , T Operating and Storage Temperature Range 55 to +175 C J STG T Maximum Lead Temperature for Soldering Purpose 300 C L 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. L = 0.345 mH, I = 48 A, V = 25 V, R = 25 , starting T = 25C. AS DD G J 3. I 43.5 A, di/dt 300 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FQH44N10133 Unit R Thermal Resistance, Junction to Case, Max. 0.83 C/W JC Thermal Resistance, CasetoSink, Typ. 0.24 R C/W CS R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FQH44N10133 FQH44N10 TO247 Tube N/A N/A 30 Units www.onsemi.com 2