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V = 10 V, I = 6.5 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary Low Gate Charge ( Typ. 43 nC) planar stripe and DMOS technology. This advanced Low Crss ( Typ. 20 pF) MOSFET technology has been especially tailored to reduce 100% Avalanche Tested on-state resistance, and to provide superior switching RoHS Compliant performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G 2 D I -PAK S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQI13N50CTU Unit V Drain-Source Voltage 500 V DSS I - Continuous (T = 25C) Drain Current 13 A D C - Continuous (T = 100C) 8A C I (Note 1) Drain Current - Pulsed 52 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13 A AR E (Note 1) Repetitive Avalanche Energy 19.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 195 W D C - Derate above 25C 1.56 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQI13N50CTU Unit R Thermal Resistance, Junction-to-Case, Max. 0.64 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQI13N50C Rev. C1