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V = 10 DS(on) GS produced using Fairchild Semiconductors proprietary planar V, I = 6.4 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 8.7 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 20 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP13N10L Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 12.8 A D C - Continuous (T = 100C) 9.05 A C I (Note 1) Drain Current - Pulsed 51.2 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 95 mJ AS I Avalanche Current (Note 1) 12.8 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 65 W D C - Derate above 25C 0.43 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQP13N10L + Thermal Resistance, Junction-to-Case, Max. 2.31 6 + - & 6 Thermal Resistance, Junction-to-Ambient, Max. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP13N10L Rev. C1