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V = -10 V, DS(on) GS transistors are produced using Fairchild s proprietary, I = -5.7 A D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 45 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand a high energy pulse in the avalanche and o 175 C Maximum Junction Temperature Rating commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S G G D S TO-220 D o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP11P06 Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -11.4 A D C - Continuous (T = 100C) -8.05 A C I Drain Current - Pulsed (Note 1) -45.6 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 160 mJ AS I Avalanche Current (Note 1) -11.4 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25C) 53 W D C - Derate above 25C 0.35 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP11P06 Unit R Thermal Resistance, Junction-to-Case, Max. 2.85 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP11P06 Rev. C0