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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 2.1 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 9.5 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D 2 S I -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQI4N90TU Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 4.2 A D C - Continuous (T = 100C) 2.65 A C I (Note 1) Drain Current - Pulsed 16.8 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 570 mJ AS I Avalanche Current (Note 1) 4.2 A AR E Repetitive Avalanche Energy (Note 1) 14 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V Power Dissipation (T = 25C) * 3.13 W P A D Power Dissipation (T = 25C) 140 W C - Derate above 25C 1.12 W/C T , T Operating and Storage Temperature Range -55 to +150 C J stg Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics Symbol Parameter Unit FQI4N90TU R Thermal Resistance, Junction to Case, Max. 0.89 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 40 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQI4N90 Rev. C1