X-On Electronics has gained recognition as a prominent supplier of FQN1N60CTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQN1N60CTA MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQN1N60CTA ON Semiconductor

FQN1N60CTA electronic component of ON Semiconductor
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See Product Specifications
Part No.FQN1N60CTA
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V NCH MOSFET
Datasheet: FQN1N60CTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7803 ea
Line Total: USD 0.78 
Availability - 10870
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
391
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2563
10 : USD 0.2523
25 : USD 0.2483
50 : USD 0.2443
100 : USD 0.2403
250 : USD 0.2363

43
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5407
10 : USD 0.4423
30 : USD 0.3939
100 : USD 0.3456
500 : USD 0.3164
1000 : USD 0.3009

10870
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7803
10 : USD 0.5183
100 : USD 0.3522
500 : USD 0.3054
1000 : USD 0.272
2000 : USD 0.2196
10000 : USD 0.2162

   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Continuous Drain Current
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Forward Transconductance - Min
Gate-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQN1N60CTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQN1N60CTA and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel QFET 600 V, 0.3 A, 11.5 FQN1N60C Description www.onsemi.com This NChannel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power S D factor correction (PFC), and electronic lamp ballasts. G Features TO92 4.75x4.80 0.3 A, 600 V, R = 11.5 (Max.) V = 10 V, DS(on) GS CASE 135AV I = 0.15 A D Low Gate Charge (Typ. 4.8 nC) D Low Crss (Typ. 3.5 pF) 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C G Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS S V Gate to Source Voltage 30 V GSS I Drain Current A D Continuous (T = 25C) 0.3 C MARKING DIAGRAM Continuous (T = 100C) 0.18 C I Drain Current Pulsed (Note 1) 1.2 A DM A/FQN E Single Pulsed Avalanche Energy (Note 2) 33 mJ AS 1N60C YWW I Avalanche Current (Note 1) 0.3 A AR E Repetitive Avalanche Energy (Note 1) 0.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation D (T = 25C) 1 W A (T = 25C) 3 W L Derate above 25C 0.02 W/C A = Assembly Site T , T Operating and Storage Temperature Range 55 to +150 C J STG FQN1N60C = Specific Device Code Y = Year of Production T Maximum Lead Temperature for Soldering, 300 C L WW = Work Week Number 1/8 from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Device Package Shipping 2. L = 59 mH, I = 1.1 A, V = 50 V, R = 25 Starting T = 25C. AS DD G J FQN1N60CTA TO92 3LD 2000 / FanFold 3. I 0.3 A, di/dt 200 A/ s, V BV , Starting T = 25C. SD DD DSS J Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2021 Rev. 2 FQN1N60C/DFQN1N60C THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, JunctiontoLead, Max. (Note 5) 50 C/W JL R Thermal Resistance, JunctiontoAmbient, Max. (Note 6) 140 JA ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTIC BV Drain to Source Breakdown Voltage 600 V I = 250 A, V = 0 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, Referenced to 25C 0.6 V/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current V = 600 V, V = 0 V 50 A DSS DS GS V = 480 V, T = 125C 250 DS C I Gate to Body Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I Gate to Body Leakage Current, Reverse V = 30 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) GS DS D R Static Drain to Source OnResistance V = 10 V, I = 0.15 A 9.3 11.5 DS(on) GS D g Forward Transconductance V = 40 V, I = 0.3 A 0.75 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1.0 MHz 130 170 pF iss DS GS C Output Capacitance 19 25 pF oss C Reverse Transfer Capacitance 3.5 6 pF rss SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 300 V, I = 1.1 A, R = 25 7 24 ns d(on) DD D G (Note 4) t TurnOn Rise Time 21 52 ns r t TurnOff Delay Time 13 36 ns d(off) t TurnOff Fall Time 27 64 ns f V = 480 V, I = 1.1 A, V = 10 V Q Total Gate Charge 4.8 6.2 nC g DS D GS (Note 4) Q Gate to Source Charge 0.7 nC gs Q Gate to Drain Charge 2.7 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain to Source Diode Forward Current 0.3 A S I Maximum Pulsed Drain to Source Diode Forward Current 1.2 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 0.3 A 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 1.1 A, dI /dt = 100 A/ s 190 ns rr GS S F Q Reverse Recovery Charge 0.53 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. 5. Reference point of the R is the drain lead. JL 6. When mounted on 3x4.5 FR4 PCB without any pad copper in a still air environment (R is the sum of the junctiontocase and casetoambient thermal resistance. R is determined by the users board design) JA CA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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