MOSFET N-Channel, QFET 1000 V, 8.0 A, 1.45 FQH8N100C Description This NChannel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially www.onsemi.com tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power V R MAX I MAX DS DS(ON) D factor correction (PFC), and electronic lamp ballasts. 1000 V 1.45 10 V 8 A Features D 8 A, 1000 V, R = 1.45 Max.) V = 10 V DS(on) GS Low Gate Charge (Typ. 53 nC) Low Crss (Typ. 16 pF) Fast Switching G 100% Avalanche Tested Improved dv/dt Capability This Device is PbFree and is RoHS Compliant S N-CHANNEL MOSFET G D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FQH 8N100C Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FQH8N100C = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: February, 2020 Rev. 3 FQH8N100C/DFQH8N100C ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FQH8N100C Unit V DrainSource Voltage 1000 V DSS I Drain Current: Continuous (T = 25C) 8.0 A D C Continuous (T = 100C) 5.0 C I Drain Current: Pulsed (Note 1) 32 A DM V GateSource Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 850 mJ AS I Avalanche Current (Note 1) 8.0 A AR E Repetitive Avalanche Energy (Note 1) 22 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation T = 25C 225 W D C Derate Above 25C 1.79 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulsewidth limited by maximum junction temperature. 2. L = 25 mH, I = 8.0 A, V = 50 V, R = 25 , Starting T = 25C AS DD G J 3. I 8.0 A, di/dt 200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FQH8N100C FQH8N100C TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FQH8N100C Unit R Thermal Resistance, Junction to Case, Max. 0.56 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2