Preliminary Technical Information TM High Voltage XPT V = 4500V IXYX40N450HV CES IGBT I = 40A C110 V 3.9V CE(sat) TO-247PLUS-HV Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4500 V CES C G V T = 25C to 150C, R = 1M 4500 V CGR J GE E Tab V Continuous 20 V C GES V Transient 30 V GEM I T = 25C 95 A C25 C G = Gate E = Emitter I T = 110C 40 A C = Collector Tab = Collector C110 C I T = 25C, 1ms 350 A CM C SSOA V = 15V, T = 125C, R = 10 I = 120 A GE VJ G CM (RBSOA) Clamped Inductive Load 3600 V Features P T = 25C 660 W C C T -55 ... +150 C J High Voltage Package T 150 C JM High Blocking Voltage T -55 ... +150 C stg High Peak Current Capability T Maximum Lead Temperature for Soldering 300 C L Low Saturation Voltage T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 20..120/4.5..27 N/lb C Advantages Weight 6 g Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV I = 250A, V = 0V 4500 V CES C GE Uninterruptible Power Supplies (UPS) V I = 250A, V = V 3.0 5.0 V Laser Generators GE(th) C CE GE Capacitor Discharge Circuits I V = V , V = 0V 25 A CES CE CES GE AC Switches T = 125C 1.25 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 40A, V = 15V, Note 1 3.2 3.9 V CE(sat) C GE T = 125C 4.0 V J 2016 IXYS CORPORATION, All Rights Reserved DS100616A(8/16) IXYX40N450HV Symbol Test Conditions Characteristic Values TO-247PLUS-HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E1 E A R A2 g I = 40A, V = 10V, Note 1 18 30 S fS C CE Q C 3550 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 146 pF oes CE GE 4 D2 C 67 pF 1 2 3 res L1 A3 D3 2X E2 E3 Q 170 nC A1 g L 4X Q I = 40A, V = 15V, V = 1000V 19 nC ge C GE CE Q 70 nC e b b1 e1 c gc 3X 3X t 36 ns 1 - Gate d(on) Resistive Switching Times, T = 25C J 2 - Emitter t 330 ns r 3,4 - Collector I = 40A, V = 15V C GE t 110 ns d(off) V = 960V, R = 2 CE G t 1120 ns f t 46 ns d(on) Resistive Switching Times, T = 125C J t 740 ns r I = 40A, V = 15V C GE t 118 ns d(off) V = 960V, R = 2 CE G t 1010 ns f R 0.19 C/W thJC R 0.15 C/W thCS Note: 1. Pulse test, t < 300s, duty cycle, d < 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537