X-On Electronics has gained recognition as a prominent supplier of NTE336 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE336 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE336 NTE

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Part No.	NTE336
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 25V; 20A; 250W; T72W; Pout:80W
Datasheet:	NTE336 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 96.5588 ea
Line Total: USD 96.56

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NTE336 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 1 Multiples : 1	1 : USD 96.5588 10 : USD 69.4332 25 : USD 64.8 50 : USD 60.75

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 89.964

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Mounting Screw Screw
Kind Of Transistor Rf Rf
Case T72w T72w
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 80 W 80 W
Collector-Emitter Voltage 25 V 25 V
Collector Current 20 A 20 A
Power Dissipation 250 W 250 W
Frequency 14 To 30 MHz 14 To 30 MHz
Current Gain 10 To 150 10 To 150

We are delighted to provide the NTE336 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE336 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W C D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/ C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Emitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B V I = 50mA, V = 0 36 V (BR)CES C BE Emitter Base Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 5A, V = 5V 10 150 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, 250 pF ob CB E f = 1MHz Functional Tests CommonEmitter Amplifier Power Gain G 12 dB V = 12.5V, pe CC PP = 80W80W, OUT Collector Efficiency 50 % f = 30MHzf = 30MHz Series Equivalent Input Impedance Z .938 j.341 in Series Equivalent Output Impedance Z 1.16 j.201 out Parallel Equivalent Input Impedance 1.06 1817pF Parallel Equivalent Output Impedance 1.19 777pF NTE335 NTE336 1.040 (26.4) Max .520 (13.2) .725 (18.42) .127 (3.17) Dia C (2 Holes) EC .250 (6.35) .230 EE (5.84) BE .225 (5.72) 1.061 (25.95) B .385 Ceramic Cap (9.8) .100 (2.54) .480 (12.1) Dia .005 (0.15) Dia .260 (6.6) .750 .168 (4.27) (19.05) .065 .975 (24.77) .095 (2.42) 8 32 NC 3A (1.68) Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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