X-On Electronics has gained recognition as a prominent supplier of NTE337 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE337 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE337 NTE

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Part No.	NTE337
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 2A; 20W; T72H; Pout:8W
Datasheet:	NTE337 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2: USD 61.4025 ea
Line Total: USD 122.8

Availability - 0

MOQ: 2 Multiples: 1
Pack Size: 1

NTE337 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 2 Multiples : 1	2 : USD 61.4025 10 : USD 36.7956 25 : USD 34.344 50 : USD 33.4476 100 : USD 32.1948

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 1 Multiples : 1	1 : USD 47.6823

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Mounting Screw Screw
Case T72h T72h
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 8 W 8 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 2 A 2 A
Power Dissipation 20 W 20 W
Frequency 27 To 50 MHz 27 To 50 MHz

We are delighted to provide the NTE337 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE337 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communica- tions equipment operating at frequencies to 80MHz. Features: Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 18 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +125C 10 mA CES CE BE C I V = 15V, I = 0 1 mA CBO CB E ON Characteristics DC Current Gain h I = 500mA, V = 5V 5 FE C CE Note 1. Pulsed through a 25mH inductor. Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1 to 1MHz 90 pF ob CB EParameter Symbol Test Conditions Min Typ Max Unit Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 8W, f = 50MHz 10 dB PE out Power Gain Power Output P P = 800mW, f = 50MHz 8 W out in Collector Efficiency h P = 8W, f = 50MHz 50 % out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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