NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large signal amplifier driver and predriver stages. This device is intended for use in industrial communica- tions equipment operating at frequencies to 80MHz. Features: Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 18 V (BR)CEO C B V I = 50mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +125C 10 mA CES CE BE C I V = 15V, I = 0 1 mA CBO CB E ON Characteristics DC Current Gain h I = 500mA, V = 5V 5 FE C CE Note 1. Pulsed through a 25mH inductor. Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1 to 1MHz 90 pF ob CB EParameter Symbol Test Conditions Min Typ Max Unit Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 8W, f = 50MHz 10 dB PE out Power Gain Power Output P P = 800mW, f = 50MHz 8 W out in Collector Efficiency h P = 8W, f = 50MHz 50 % out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat