NTE3302 Insulated Gate Bipolar Transistor NChannel Enhancement Mode, High Speed Switch TO220 Full Pack Features: High Input Impedance High Speed Low Saturation Voltage Enhancement Mode Applications: High Power Switching Motor Control Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 600V CES GateEmitter Voltage, V ........................................................ 20V GES Collector Current, I C DC .......................................................................... 8A Pulse (1ms) ................................................................. 16A Collector Power Dissipation (T = +25 C), P ......................................... 30W C C Operating Junction Temperature, T .............................................. +150 C J Storage Temperature Range, T ......................................... 55 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I nA V = 20V, V = 0 500 GES GE CE Collector Cutoff Current I V = 600V, V = 0 1.0 mA CES CE GE CollectorEmitter Breakdown Voltage V I = 2mA, V = 0 600 V (BR)CES C GE GateEmitter Cutoff Voltage V I = 8mA, V = 5V 3.0 6.0 V GE(off) C CE CollectorEmitter Saturation Voltage V I = 8A, V = 15V 3.0 4.0 V CE(sat) C GE Input Capacitance C V = 10V, V = 0, f = 1MHz 650 pF ies CE GE Rise Time t V = 300V 0.3 0.6 s r CC TurnOn Time t 0.4 0.8 s on Fall Time t 0.15 0.35 s f TurnOff Time t 0.5 1.0 s off Rev. 814C G E .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max GC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated