NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CBO CollectorEmitter Voltage (R = 150 ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V BE CER CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW A C Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C CollectorBase Breakdown Voltage V I = 10 A, I = 0 75 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 150 75 V (BR)CER C BE V I = 1mA, R = 45 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C DC Current Gain h V = 5V, I = 500mA 60 320 FE CE C Current Gain Bandwidth Product f V = 10V, I = 50mA 180 250 T CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 0.2 0.6 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 50mA 0.9 1.2 V BE(sat) C B Output Capacitance C V = 10V, f = 1MHz 15 25 pF ob CB Output Power P V = 12V, f = 27MHz, P = 35mW 1.0 1.8 W O CC i Collector Efficiency 60 %.330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max