NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT23 type surface mount case designed for generalpurpose applications. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA B Total Power Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW A D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction to Ambient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W thJA Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm). Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Current I V = 30V 100 nA CBO CBO EmitterBase Current I V = 10V 100 nA EBO EB CollectorEmitter Breakdown Voltage V I = 10mA 30 V (BR)CEO C CollectorBase Breakdown Voltage V I = 10 A 40 V (BR)CBO C EmitterBase Breakdown Voltage V I = 100nA 10 V (BR)EBO E CollectorEmitter Saturation Voltage V I = 100mA, I = 0.1mA 1 V CE(sat) C B BaseEmitter Saturation Voltage V I = 100mA, I = 0.1mA 1.5 V BE(sat) C B DC Current Gain h I = 1mA, V = 5V 4000 FE C CE I = 10mA, V = 5V 10000 C CE I = 100mA, V = 5V 20000 C CE Transition Frequency f I = 30mA, V = 5V, f = 100MHz 220 MHz T C CE Collector Capacitance C I = 0, V = 30V 3.5 pF c E CBSchematic Diagram C C B B E E NPN PNP .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)