NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for generalpurpose amplifier and lowfrequency switching applications. Features: High DC Current Gain I = 10A: C h = 2400 Typ (NTE251) FE h = 4000 Typ (NTE252) FE CollectorEmitter Sustaining Voltage: V = 100V Min CEO(sus) Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter SustainingVoltage V I = 100mA, I = 0 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 1.0 mA CEO CE E I V = 100V, V = 1.5V 0.5 mA CEX CE BE(off) V = 100V, V = 1.5V, 5.0 mA CE BE(off) T = +150C A Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 10A 750 18000 FE CE C V = 3V, I = 20A 100 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 40mA 2.0 V CE(sat) C B I = 20A, I = 200mA 3.0 V C B BaseEmitter Saturation Voltage V I = 20A, I = 200mA 4.0 V BE(sat) C B BaseEmitter ON Voltage V V = 3V, I = 10A 2.8 V BE(on) CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 10A, f = 1kHz 300 fe CE C Magnitude of Common Emitter h V = 3V, I = 10A, f = 1MHz 4.0 MHz fe CE C SmallSignal ShortCircuit Forward Current Transfer Ratio Output Capacitance C V = 10V, I = 0, f = 0.1MHz pF ob CB E NTE251 400 NTE252 600 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% Schematic Diagram C C B B E E NPN PNP