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X-On Electronics has gained recognition as a prominent supplier of NTE2519 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2519 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2519 NTE

NTE2519 electronic component of NTE
NTE2519 NTE
NTE2519 Bipolar Transistors - BJT
NTE2519  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE2519
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 160V; 1.5A; 10W; TO126
Datasheet: NTE2519 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
29: USD 2.6235 ea
Line Total: USD 76.08 
Availability - 9
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 29
Multiples : 1
29 : USD 2.6235
31 : USD 2.1465
250 : USD 1.5625
500 : USD 1.475
1000 : USD 1.425
2500 : USD 1.3625
5000 : USD 1.325
7500 : USD 1.3125

26
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 2.128
3 : USD 1.904
10 : USD 1.694
12 : USD 1.596
25 : USD 1.512

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
 
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We are delighted to provide the NTE2519 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2519 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: High Breakdown Voltage Large Current Capacity Isolated Package Applications: Color TV Audio Output Converters Inverters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 100mA 140 400 FE CE C V = 5V, I = 10mA 90 CE C Gain Bandwidth Product f V = 10V, I = 50mA 120 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2519 C V = 10V, f = 1MHz 14 pF ob CB NTE2520 22 pF Collector to Emitter Saturation Voltage NTE2519 V I = 500mA, I = 50mA 0.13 0.45 V CE(sat) C B NTE2520 0.2 0.5 V Base to Emitter Saturation Voltage V I = 500mA, I = 50mA 0.85 1.2 V BE(sat) C B Collector to Base Breakdown Voltage V I = 10 A, I = 0 180 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 1mA, R = 160 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C Rise Time t I = 10A, I = 10A, 0.04 s on C B1 I = 700mA, Note 1 B2 Storage Time NTE2519 t 1.2 s stg NTE2520 0.7 s Fall Time NTE2519 t 0.08 s f NTE2520 0.04 s Note 1. Pulse Width = 20 s, Duty Cycle 1%. .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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