NTE2513 (NPN) & NTE2514 (PNP) Silicon Complementary Transistors High Current Switch Features: Low Collector Emitter Saturation Voltage High GainBandwidth Product Excellent Linearity of h FE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 2V, I = 500mA 140 240 FE CE C V = 2V, I = 6A 35 CE C GainBandwidth Product f T NTE2513 V = 5V, I = 1A 180 MHz CE C NTE2514 130 MHzElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance C ob NTE2513 V = 10V, f = 1MHz 65 pF CB NTE2514 95 pF Collector Emitter Saturation Voltage V CE(sat) NTE2513 I = 4A, I = 200mA 200 400 mV C B NTE2514 250 500 mV Base Emitter Saturation Voltage V I = 4A, I = 200mA 0.95 1.3 V BE(sat) C B Collector Base Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C TurnOn Time t 50 ns V = 25V, V = 5V, on CC BE 10I = 10I = I = 4A, B1 B2 C Storage Time t stg Pulse Width = 20 s, NTE2513 500 ns Duty Cycle Duty Cycle 1%, Note 1 1%, Note 1 NTE2514 450 ns Fall Time t 20 ns f Note 1. For NTE2514, the polarity is reversed. .315 (8.0) .106 (2.7) .433 (11.0) C E B .610 (15.5) .094 (2.4)