X-On Electronics has gained recognition as a prominent supplier of NTE2517 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2517 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2517 NTE

NTE2517 electronic component of NTE
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See Product Specifications
Part No.NTE2517
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 50V; 2.5A; 10W; TO126
Datasheet: NTE2517 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 1.111 ea
Line Total: USD 44.44 
Availability - 38
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
38
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 40
Multiples : 1
40 : USD 1.111
50 : USD 1.01
250 : USD 0.8775
1000 : USD 0.7862
2500 : USD 0.7425
5000 : USD 0.7312
7500 : USD 0.7038
10000 : USD 0.6938

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2517 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2517 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: Low Saturation Voltage High Current Capacity and Wide ASO Applications: Voltage Regulators Relay Drivers Lamp Drivers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 50V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 100 nA EBO EB C DC Current Gain h V = 2V, I = 100mA 140 400 FE CE C V = 2V, I = 2A 35 CE C Gain Bandwidth Product f V = 10V, I = 50mA 140 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2517 C V = 10V, f = 1MHz 10 pF ob CB NTE2518 25 pF Collector to Emitter Saturation Voltage NTE2517 V I = 1A, I = 50mA 110 300 mV CE(sat) C B NTE2518 250 500 mV Base to Emitter Saturation Voltage V I = 1A, I = 50mA 0.85 1.2 V BE(sat) C B Collector to Base Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C TurnOn Time t I = 10A, I = 10A, 35 ns on C B1 I = 1A B2 Storage Time NTE2517 t 550 ns stg NTE2518 350 ns Fall Time t 30 ns f .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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