NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: Low Saturation Voltage High Current Capacity and Wide ASO Applications: Voltage Regulators Relay Drivers Lamp Drivers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 50V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 100 nA EBO EB C DC Current Gain h V = 2V, I = 100mA 140 400 FE CE C V = 2V, I = 2A 35 CE C Gain Bandwidth Product f V = 10V, I = 50mA 140 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2517 C V = 10V, f = 1MHz 10 pF ob CB NTE2518 25 pF Collector to Emitter Saturation Voltage NTE2517 V I = 1A, I = 50mA 110 300 mV CE(sat) C B NTE2518 250 500 mV Base to Emitter Saturation Voltage V I = 1A, I = 50mA 0.85 1.2 V BE(sat) C B Collector to Base Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C TurnOn Time t I = 10A, I = 10A, 35 ns on C B1 I = 1A B2 Storage Time NTE2517 t 550 ns stg NTE2518 350 ns Fall Time t 30 ns f .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)