NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: High Gain Bandwidth Product: f = 800MHz Typ. T Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: C = 2.9pF re NTE2512: C = 4.6pF re Applications: Very HighDefinition CRT Display Video Output Color TV Chroma Output WideBand Amp Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO Emitter base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 60V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 1.0 A EBO EB C DC Current Gain h V = 10V, I = 50mA 100 320 FE CE C V = 10V, I = 400mA 20 CE C Gain Bandwidth Product f V = 10V, I = 100mA 800 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Emitter Saturation Voltage V CE(sat) NTE2511 I = 100mA, I = 10mA 0.6 V C B NTE2512 0.8 V Base Emitter Saturation Voltage V I = 100mA, I = 10mA 1.0 V BE(sat) C B Collector Base Breakdown Voltage V I = 10 A, I = 0 80 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 60 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 100 A, I = 0 4 V (BR)EBO E C Output Capacitance C ob NTE2511 V = 30V, f = 1MHz 3.4 pF CB NTE2512 5.2 pF Reverse Transfer Capacitance C re NTE2511 V = 30V, f = 1MHz 2.9 pF CB NTE2512 4.6 pF .330 (8.38) Max .175 (4.45) .450 Max (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max