X-On Electronics has gained recognition as a prominent supplier of NTE2512 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2512 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2512 NTE

NTE2512 electronic component of NTE
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See Product Specifications
Part No.NTE2512
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 60V; 500mA; 10W; TO126
Datasheet: NTE2512 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 4.1375 ea
Line Total: USD 41.38 
Availability - 28
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
28
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 1
10 : USD 4.1375
100 : USD 3.2875
250 : USD 3.1875
500 : USD 3.1
1000 : USD 2.9375
2500 : USD 2.85
5000 : USD 2.8
7500 : USD 2.7

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2512 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2512 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: High Gain Bandwidth Product: f = 800MHz Typ. T Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: C = 2.9pF re NTE2512: C = 4.6pF re Applications: Very HighDefinition CRT Display Video Output Color TV Chroma Output WideBand Amp Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO Emitter base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 60V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 1.0 A EBO EB C DC Current Gain h V = 10V, I = 50mA 100 320 FE CE C V = 10V, I = 400mA 20 CE C Gain Bandwidth Product f V = 10V, I = 100mA 800 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Emitter Saturation Voltage V CE(sat) NTE2511 I = 100mA, I = 10mA 0.6 V C B NTE2512 0.8 V Base Emitter Saturation Voltage V I = 100mA, I = 10mA 1.0 V BE(sat) C B Collector Base Breakdown Voltage V I = 10 A, I = 0 80 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 60 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 100 A, I = 0 4 V (BR)EBO E C Output Capacitance C ob NTE2511 V = 30V, f = 1MHz 3.4 pF CB NTE2512 5.2 pF Reverse Transfer Capacitance C re NTE2511 V = 30V, f = 1MHz 2.9 pF CB NTE2512 4.6 pF .330 (8.38) Max .175 (4.45) .450 Max (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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